federal_register: E6-4071

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E6-4071 Dynamic Random Access Memory Semiconductors from the Republic of Korea: Final Results of Countervailing Duty Administrative Review Notice On September 15, 2005, the Department of Commerce ("the Department") published in the Federal Register its preliminary results of administrative review of the countervailing duty order on dynamic random access memory semiconductors ("DRAMS") from the Republic of Korea ("Korea") for the period April 7, 2003, through December 31, 2003. This review covers one company, Hynix Semiconductor, Inc. ("Hynix"). We gave interested parties an opportunity to comment on the preliminary results. Based on information received since the preliminary results and our analysis of the comments received, the Department has revised the net subsidy rate for Hynix. The final net subsidy rate for the reviewed company is listed below in the section entitled "Final Results of Review." 2006-03-21 2006 3 https://www.federalregister.gov/documents/2006/03/21/E6-4071/dynamic-random-access-memory-semiconductors-from-the-republic-of-korea-final-results-of https://www.govinfo.gov/content/pkg/FR-2006-03-21/pdf/E6-4071.pdf Commerce Department; International Trade Administration 54,261 On September 15, 2005, the Department of Commerce ("the Department") published in the Federal Register its preliminary results of administrative review of the countervailing duty order on dynamic random access memory semiconductors ("DRAMS") from the...  

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